SI5517DU-T1-GE3 Vishay, SI5517DU-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI5517DU-T1-GE3
• Description: MOSFET N/PCH D-S 20V PPAK CHIPFT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5517DU-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 8V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 7.2A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 32mohm
• Rds(on) Test Voltage Vgs: 8V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.2 A, - 4.6 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5517DU-T1-GE3TR

Si5517DU
Vishay Siliconix
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
C
V
I
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
Q
g
R
oss
DS
rss
iss
fs
gs
gd
g
g
/T
/T
J
J
V
V
V
V
V
DS
DS
V
V
V
DS
DS
DS
DS
DS
DS
= - 10 V, V
= - 10 V, V
V
= - 20 V, V
= 10 V, V
V
V
V
V
= - 10 V, V
= 20 V, V
V
V
V
GS
= 10 V, V
= 10 V, V
V
V
V
V
V
V
V
DS
GS
GS
DS
V
DS
V
DS
DS
DS
DS
GS
GS
GS
GS
DS
DS
GS
= - 1.8 V, I
≤ - 5 V, V
= - 4.5 V, I
= - 2.5 V, I
= V
= - 10 V, I
= V
= - 20 V, V
= 0 V, V
≤ 5 V, V
I
I
= 20 V, V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 0 V, I
= 10 V, I
I
D
I
D
= 0 V, I
N-Channel
P-Channel
N-Channel
P-Channel
D
D
f = 1 MHz
Test Conditions
GS
= - 250 µA
= - 250 µA
GS
GS
GS
GS
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
, I
, I
= - 4.5 V, I
= - 8 V, I
= 4.5 V, I
D
= 0 V, T
= 0 V, f = 1 MHz
D
= 8 V, I
D
= 0 V, T
GS
GS
GS
D
= 0 V, f = 1 MHz
D
D
D
= - 250 µA
D
D
D
D
D
= - 1 mA
GS
= 250 µA
= 1 mA
GS
= - 0.76 A
= 4.4 A
= - 3.3 A
= 4.5 V
= - 4.5 V
= 4.4 A
= - 3.3 A
= 4.1 A
= - 2.8 A
= 1.8 A
= ± 8 V
= 0 V
= 0 V
D
J
D
J
D
D
= 55 °C
= 4.4 A
= - 4.6 A
= 55 °C
= 4.4 A
= - 1.8 A
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
Min.
- 0.4
- 20
- 15
0.4
20
20
0.0455
Typ.
0.032
0.060
0.037
0.083
0.108
- 2.6
10.5
0.91
0.75
- 20
520
455
100
105
S-81449-Rev. B, 23-Jun-08
2.4
9.1
5.5
0.7
1.5
1.9
17
22
60
65
Document Number: 73529
9
6
8
a
0.039
0.072
0.045
0.100
0.055
0.131
Max.
- 100
100
- 10
8.5
- 1
- 1
10
16
14
1
1
9
mV/°C
Unit
nA
µA
pF
nC
Ω
Ω
V
V
A
S