SI5517DU-T1-GE3 Vishay, SI5517DU-T1-GE3 Datasheet - Page 6

MOSFET N/PCH D-S 20V PPAK CHIPFT

SI5517DU-T1-GE3

Manufacturer Part Number
SI5517DU-T1-GE3
Description
MOSFET N/PCH D-S 20V PPAK CHIPFT
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5517DU-T1-GE3

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
39 mOhm @ 4.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 8V
Input Capacitance (ciss) @ Vds
520pF @ 10V
Power - Max
8.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® ChipFet Dual
Module Configuration
Dual
Transistor Polarity
N And P Channel
Continuous Drain Current Id
7.2A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
32mohm
Rds(on) Test Voltage Vgs
8V
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.039 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
7.2 A, - 4.6 A
Power Dissipation
2.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI5517DU-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5517DU-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI5517DU-T1-GE3
0
Si5517DU
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
15
12
9
6
3
0
0
25
Package Limited
D
T
is based on T
C
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
10
8
6
4
2
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
S-81449-Rev. B, 23-Jun-08
Document Number: 73529
100
125
150

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