SI5517DU Vishay Siliconix, SI5517DU Datasheet
SI5517DU
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SI5517DU Summary of contents
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... Bottom View Ordering Information: Si5517DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source-Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si5517DU Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance ...
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... ° 1 1 N-Channel 1.2 A, dI/dt = 100 A/µ P-Channel dI/dt = 100 A/µ Si5517DU Vishay Siliconix a Min. Typ. N- 2.8 Ω N- Ω g P- 2.7 Ω P- Ω N- P-Ch 55 N- 2.8 Ω N- Ω ...
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... Si5517DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 4 Total Gate Charge (nC) ...
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... D(on 0 °C A Single Pulse BVDSS limited 0.01 0 Drain-to-Source Voltage (V) DS > minimum V at which Safe Operating Area, Junction-to-Ambient Si5517DU Vishay Siliconix 0.08 0.07 0.06 125 °C 0.05 25 °C 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... Si5517DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix Notes Duty Cycle Per Unit Base = R thJA thJA 4. Surface Mounted 1 10 100 - Si5517DU °C/W (t) 600 1 www.vishay.com 7 Datasheet pdf - http://www.DataSheet4U.net/ ...
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... Si5517DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 3 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. 1 0.25 0.20 0.15 0.10 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 4 ...
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... I limited D(on °C A BVDSS limited Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS > minimum V at which Safe Operating Area, Junction-to-Case Si5517DU Vishay Siliconix 0.20 0.16 0.12 0. ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 ...
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... Si5517DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 8 Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... S-81449-Rev. B, 23-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 0.05 0. Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si5517DU Vishay Siliconix Notes Duty Cycle Per Unit Base = R thJA 3 ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies ...