SI5517DU Vishay Siliconix, SI5517DU Datasheet - Page 9

• Manufacturer Part Number: SI5517DU
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

www.DataSheet.co.kr
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73529
S-81449-Rev. B, 23-Jun-08
0.8
0.7
0.6
0.5
0.4
0.3
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
0
SD
0.4
Threshold Voltage
T
- Source-to-Drain Voltage (V)
T
J
J
= 150 °C
25
- Temperature (°C)
0.6
50
0.8
75
I
D
T
0.01
1.0
100
= 250 µA
100
0.1
J
10
= 25 °C
1
0.1
* V
I
1.2
Limited by R
125
D(on)
Safe Operating Area, Junction-to-Case
GS
Single Pulse
T
limited
>
A
1.4
150
= 25 °C
minimum V
V
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS limited
at which R
IDM limited
DS(on)
10
0.20
0.16
0.12
0.08
0.04
40
30
20
10
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100 ms
DC
10 ms
1 s
10 s
1 ms
0.01
1
100
V
GS
0.1
- Gate-to-Source Voltage (V)
T
A
= 25 °C
2
Time (s)
Vishay Siliconix
1
3
Si5517DU
10
www.vishay.com
T
I
A
D
= 125 °C
= 4.6 A
4
100
600
5
9
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