SI5517DU-T1-GE3 Vishay, SI5517DU-T1-GE3 Datasheet - Page 5

MOSFET N/PCH D-S 20V PPAK CHIPFT

SI5517DU-T1-GE3

Manufacturer Part Number
SI5517DU-T1-GE3
Description
MOSFET N/PCH D-S 20V PPAK CHIPFT
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5517DU-T1-GE3

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
39 mOhm @ 4.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 8V
Input Capacitance (ciss) @ Vds
520pF @ 10V
Power - Max
8.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® ChipFet Dual
Module Configuration
Dual
Transistor Polarity
N And P Channel
Continuous Drain Current Id
7.2A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
32mohm
Rds(on) Test Voltage Vgs
8V
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.039 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
7.2 A, - 4.6 A
Power Dissipation
2.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI5517DU-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5517DU-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI5517DU-T1-GE3
0
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73529
S-81449-Rev. B, 23-Jun-08
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
20
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
50
0.6
T
J
I
D
= 150 °C
75
= 250 µA
0.8
0.01
100
0.1
10
100
T
1
0.1
J
= 25 °C
I
D(on)
* V
1.0
Safe Operating Area, Junction-to-Ambient
125
Limited by R
GS
limited
>
V
150
minimum V
1.2
DS
- Drain-to-Source Voltage (V)
DS(on)
Single Pulse
1
T
A
BVDSS limited
GS
= 25 °C
*
at which R
I
DM
limited
10
DS(on)
0.08
0.07
0.06
0.05
0.04
0.03
40
30
20
10
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
1 s
10 s
100 ms
100 µs
10 ms
DC
Single Pulse Power, Junction-to-Ambient
1 ms
0.01
1
100
V
GS
25 °C
- Gate-to-Source Voltage (V)
0.1
2
Time (s)
Vishay Siliconix
1
125 °C
3
Si5517DU
10
www.vishay.com
I
D
= 4.4 A
4
100
600
5
5

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