SI3588DV-T1-GE3 Vishay, SI3588DV-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI3588DV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3588DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 570mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 20V
• Threshold Voltage Vgs Typ: 450mV
• Power Dissipation Pd: 830mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3588DV-T1-GE3TR

Document Number: 71332
S-02383—Rev. A, 23-Oct-00
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
5
4
3
2
1
0
0
0
0
V
I
D
DS
= 3.0 A
On-Resistance vs. Drain Current
= 10 V
1
V
2
1
V
DS
Q
GS
Output Characteristics
V
g
– Drain-to-Source Voltage (V)
GS
= 4.5 thru 2 V
I
– Total Gate Charge (nC)
D
= 1.8 V
– Drain Current (A)
Gate Charge
2
4
2
3
6
3
1.5 V
V
V
GS
GS
= 4.5 V
4
8
4
= 2.5 V
_
10
5
5
New Product
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
8
6
4
2
0
0
–50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
–25
V
I
D
GS
= 3.0 A
0.5
V
V
= 4.5 V
4
DS
GS
T
Transfer Characteristics
J
0
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
C
oss
Capacitance
25
1.0
8
Vishay Siliconix
T
50
C
C
iss
25_C
= –55_C
1.5
12
75
Si3588DV
100
www.vishay.com
2.0
125_C
16
125
150
2.5
20
3