SI3588DV-T1-GE3 Vishay, SI3588DV-T1-GE3 Datasheet - Page 4
![MOSFET N/P-CH 20V 6-TSOP](/photos/18/99/189973/4243386_sml.jpg)
SI3588DV-T1-GE3
Manufacturer Part Number
SI3588DV-T1-GE3
Description
MOSFET N/P-CH 20V 6-TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI3588DV-T1-E3.pdf
(8 pages)
Specifications of SI3588DV-T1-GE3
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.5A, 570mA
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
7.5nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP (0.063", 1.60mm Width)
Transistor Polarity
N And P Channel
Drain Source Voltage Vds
20V
Threshold Voltage Vgs Typ
450mV
Power Dissipation Pd
830mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI3588DV-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3588DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3588DV
Vishay Siliconix
www.vishay.com
4
–0.0
–0.1
–0.2
–0.3
–0.4
0.2
0.1
0.1
0.01
10
0.1
1
–50
0.00
2
1
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
– Source-to-Drain Voltage (V)
J
T
Threshold Voltage
I
= 150_C
D
J
0.4
10
– Temperature (_C)
= 250 mA
25
–3
Single Pulse
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
T
10
J
100
–2
= 25_C
1.0
_
125
Square Wave Pulse Duration (sec)
150
1.2
New Product
10
–1
1
0.30
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
0.01
0
Single Pulse Power (Junction-to-Ambient)
On-Resistance vs. Gate-to-Source Voltage
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
V
Notes:
1
P
GS
DM
JM
0.1
– Gate-to-Source Voltage (V)
– T
A
t
1
= P
Time (sec)
t
2
2
DM
I
D
Z
= 3.0 A
thJA
thJA
100
t
t
(t)
1
2
S-02383—Rev. A, 23-Oct-00
= 130_C/W
1
Document Number: 71332
3
600
4
10
30
5