SI3588DV-T1-GE3 Vishay, SI3588DV-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI3588DV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3588DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 570mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 20V
• Threshold Voltage Vgs Typ: 450mV
• Power Dissipation Pd: 830mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3588DV-T1-GE3TR

Document Number: 71332
S-02383—Rev. A, 23-Oct-00
0.75
0.60
0.45
0.30
0.15
0.00
8
6
4
2
0
0
0
V
0.01
GS
0.1
2
1
= 1.8 V
10
On-Resistance vs. Drain Current
–4
1
V
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
DS
2
Output Characteristics
– Drain-to-Source Voltage (V)
I
D
V
– Drain Current (A)
GS
Single Pulse
V
2
GS
= 2.5 V
= 4.5 thru 2.5 V
4
10
3
–3
2 V
Normalized Thermal Transient Impedance, Junction-to-Foot
V
GS
6
1.5 V
4
= 4.5 V
_
_
5
8
New Product
Square Wave Pulse Duration (sec)
10
–2
600
500
400
300
200
100
10
10
8
6
4
2
0
0
–1
0.0
0
0.5
V
V
4
DS
GS
Transfer Characteristics
1.0
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
C
oss
Capacitance
8
1.5
T
25_C
1
Vishay Siliconix
C
C
iss
= –55_C
2.0
12
C
Si3588DV
rss
2.5
125_C
www.vishay.com
16
3.0
10
3.5
20
5