NDF06N62ZG ON Semiconductor, NDF06N62ZG Datasheet - Page 3

• Manufacturer Part Number: NDF06N62ZG
• Description: MOSFET N-CH 620V 1.2OHM TO220FP
• Manufacturer: ON Semiconductor

Specifications of NDF06N62ZG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 923pF @ 25V
• Power - Max: 31W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.98 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 620 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 32 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDF06N62ZG; NDF06N62ZGOS

12
10
1.5
0.5
2.6
2.2
1.8
1.4
1.0
0.6
0.2
8
6
4
2
0
2
1
0
−50
0
5
T
I
V
J
D
GS
= 25°C
= 3 A
Figure 5. On−Resistance Variation with
−25
Figure 1. On−Region Characteristics
V
= 10 V
DS
Figure 3. On−Resistance vs. V
T
5
J
, DRAIN−TO−SOURCE VOLTAGE (V)
6
, JUNCTION TEMPERATURE (°C)
15 V
0
10 V
Temperature
25
10
7
V
GS
7 V
50
(V)
15
8
75
TYPICAL CHARACTERISTICS
100
20
GS
I
T
9
D
J
= 3 A
= 25°C
6.8 V
http://onsemi.com
125
6.4 V
6.0 V
5.8 V
6.6 V
6.2 V
5.6 V
150
25
10
3
1.15
1.05
0.95
1.75
1.25
0.75
1.1
1.0
0.9
1.5
0.5
12
10
8
6
4
2
0
1
−50
3
0
Figure 4. On−Resistance vs. Drain Current and
V
Figure 6. BVDSS Variation with Temperature
T
DS
J
−25
= 25°C
≥ 30 V
V
Figure 2. Transfer Characteristics
T
2
GS
J
4
, JUNCTION TEMPERATURE (°C)
, GATE−TO−SOURCE VOLTAGE (V)
0
T
I
D
J
, DRAIN CURRENT (A)
= 150°C
4
25
Gate Voltage
5
V
GS
I
50
= 10 V
D
6
= 1 mA
T
6
J
75
= −55°C
8
100
T
J
7
= 25°C
10
125
150
12
8