NDF06N62ZG ON Semiconductor, NDF06N62ZG Datasheet - Page 5

• Manufacturer Part Number: NDF06N62ZG
• Description: MOSFET N-CH 620V 1.2OHM TO220FP
• Manufacturer: ON Semiconductor

Specifications of NDF06N62ZG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 923pF @ 25V
• Power - Max: 31W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.98 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 620 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 32 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDF06N62ZG; NDF06N62ZGOS

0.001
0.01
1.0
0.1
10
0.000001
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
20%
10%
SINGLE PULSE
0.00001
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.0001
Figure 13. Thermal Impedance for NDF06N62Z
Figure 14. Isolation Test Diagram
TYPICAL CHARACTERISTICS
0.001
http://onsemi.com
0.01
PULSE TIME (s)
5
HEATSINK
0.110″ MIN
LEADS
0.1
1.0
10
R
Steady State
qJC
100
= 4.0°C/W
1000