NDF06N62ZG ON Semiconductor, NDF06N62ZG Datasheet - Page 4

• Manufacturer Part Number: NDF06N62ZG
• Description: MOSFET N-CH 620V 1.2OHM TO220FP
• Manufacturer: ON Semiconductor

Specifications of NDF06N62ZG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 923pF @ 25V
• Power - Max: 31W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.98 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 620 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 32 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDF06N62ZG; NDF06N62ZGOS

20
15
10
0.01
5
0
100
0.1
6
5
4
3
2
1
0
0
10
0.4
1
0
Qgs
Figure 11. Diode Forward Voltage vs. Current
V
T
Drain−to−Source Voltage vs. Total Charge
V
J
GS
Figure 7. Drain−to−Source Leakage Current
GS
= 25°C
5
= 0 V
V
0.5
= 0 V
100
SD
V
Figure 9. Gate−to−Source and
Qg, TOTAL GATE CHARGE (nC)
DS
, SOURCE−TO−DRAIN VOLTAGE (V)
V
, DRAIN−TO−SOURCE VOLTAGE (V)
10
DS
200
0.6
Qgd
15
QT
vs. Voltage
T
J
T
= 150°C
300
J
0.7
= 100°C
20
400
0.8
25
V
T
I
D
TYPICAL CHARACTERISTICS
J
DS
= 6 A
= 25°C
500
= 310V
30
0.9
V
GS
http://onsemi.com
600
35
1.0
400
300
200
100
0
4
2000
1500
1000
1000
0.01
500
100
100
0.1
10
10
0
1
1
1
0
1
Figure 10. Resistive Switching Time Variation
Figure 12. Maximum Rated Forward Biased
V
I
V
C
D
Figure 8. Capacitance Variation
DD
GS
C
oss
= 6 A
iss
Safe Operating Area for NDF06N62Z
V
= 310 V
= 10 V
V
C
DS
R
Thermal Limit
Package Limit
V
Single Pulse
T
DS
C
rss
GS
DS(on)
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
= 25°C
50
= 10 V
R
G
dc
vs. Gate Resistance
Limit
, GATE RESISTANCE (W)
10
10 ms 1 ms
100
10
100
100 ms
150
V
T
J
GS
= 25°C
10 ms
= 0 V
t
t
t
t
d(on)
d(off)
r
f
1000
100
200