SI1021R-T1-GE3 Vishay, SI1021R-T1-GE3 Datasheet

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... DS(min.) DS(on 4 SC-75A (SOT-416 Marking Code Top View Ordering Information: Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current a Power Dissipation a Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes: a ...

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... Si1021R Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Forward Transconductance a Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71410 S10-2687-Rev. F, 22-Nov- °C, unless otherwise noted) A 1200 600 800 1000 1.2 1.5 1.8 Si1021R Vishay Siliconix °C J 900 125 °C 600 300 Gate-to-Source Voltage (V) GS Transfer Characteristics iss oss 8 C rss ...

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... Si1021R Vishay Siliconix TYPICAL CHARACTERISTICS (T 1000 100 T = 125 ° 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0 250 µA D 0.3 0.2 0.1 - 0.0 - 0.1 - 0 Junction Temperature (°C) J Threshold Voltage Variance Over Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 ...

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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...