SI1021R-T1-GE3 Vishay, SI1021R-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI1021R-T1-GE3
• Description: MOSFET P-CH 60V 190MA SC-75A
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1021R-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 190mA
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 1.7nC @ 15V
• Input Capacitance (ciss) @ Vds: 23pF @ 25V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -190mA
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 4ohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1021R-T1-GE3TR

TYPICAL CHARACTERISTICS (T
Document Number: 71410
S10-2687-Rev. F, 22-Nov-10
1.0
0.8
0.6
0.4
0.2
0.0
20
16
12
15
12
8
4
0
9
6
3
0
0.0
0
0
I
D
On-Resistance vs. Drain Current
0.3
= 500 mA
200
1
V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
I
D
0.6
- Total Gate Charge (nC)
V
8 V
- Drain Current (mA)
Gate Charge
GS
V
400
GS
2
V
= 4.5 V
V
DS
= 5 V
GS
= 30 V
0.9
= 10 V
600
V
3
GS
1.2
A
= 10 V
= 25 °C, unless otherwise noted)
V
800
DS
4
1.5
= 48 V
5 V
4 V
7 V
6 V
1000
1.8
5
1200
900
600
300
1.8
1.5
1.2
0.9
0.6
0.3
0.0
40
32
24
16
0
8
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
2
GS
V
5
V
V
GS
Transfer Characteristics
T
DS
GS
0
= 10 V at 500 mA
J
= 0 V
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
25
10
4
T
J
50
Vishay Siliconix
= - 55 °C
V
GS
C
15
C
C
6
oss
75
iss
rss
= 4.5 V at 25 mA
Si1021R
www.vishay.com
100
125 °C
20
8
25 °C
125
150
10
25
3