SI1021R-T1-GE3 Vishay, SI1021R-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI1021R-T1-GE3
• Description: MOSFET P-CH 60V 190MA SC-75A
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1021R-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 190mA
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 1.7nC @ 15V
• Input Capacitance (ciss) @ Vds: 23pF @ 25V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -190mA
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 4ohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1021R-T1-GE3TR

Si1021R
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
b
a
a
J
= 25 °C, unless otherwise noted)
a
Symbol
R
V
I
I
C
I
t
V
GS(th)
D(on)
DS(on)
V
Q
C
C
Q
GSS
t
DSS
OFF
g
Q
ON
oss
DS
SD
rss
iss
fs
gs
gd
g
V
V
I
D
GS
DS
V
V
 - 200 mA, V
V
DS
DS
DS
= - 10 V, I
= - 30 V, V
V
V
V
V
= 0 V, V
V
V
= - 50 V, V
V
V
= - 25 V, V
V
V
GS
DS
DS
DS
V
GS
V
V
DS
DD
DS
DS
DS
DS
DS
GS
= - 10 V, I
= - 10 V, I
= - 200 mA, V
= V
= - 4.5 V, I
Test Conditions
= -10 V, V
= -10 V, V
= - 25 V, R
= 0 V, V
= 0 V, V
= - 50 V, V
= 0 V, I
= 0 V, V
D
GS
GS
GS
= - 500 mA, T
GEN
, I
GS
= ± 10 V, T
= - 15 V, I
GS
D
D
GS
GS
D
D
= 0 V, T
= - 10 V, R
GS
= - 0.25 mA
= 0 V, f = 1 MHz
GS
GS
D
= - 10 µA
= - 500 mA
= - 100 mA
L
GS
= - 25 mA
= ± 20 V
= ± 10 V
= ± 5 V
= 150 ,
= - 4.5 V
= - 10 V
GS
= 0 V
D
= 0 V
J
J
 - 500 mA
J
= 85 °C
= 85 °C
= 125 °C
g
= 10 
- 600
Min.
- 60
- 50
- 1
80
80
S10-2687-Rev. F, 22-Nov-10
Typ.
0.26
0.46
1.7
23
10
20
35
5
Document Number: 71410
± 200
± 500
± 100
- 250
Max.
- 3.0
± 10
- 25
8
4
6
Unit
mA
mS
nC
µA
nA
pF
ns
V

V