SIA433EDJ-T1-GE3 Vishay, SIA433EDJ-T1-GE3 Datasheet - Page 2
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SIA433EDJ-T1-GE3
Manufacturer Part Number
SIA433EDJ-T1-GE3
Description
MOSFET P-CH D-S 20V SC-70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SIA433EDJ-T1-GE3.pdf
(7 pages)
Specifications of SIA433EDJ-T1-GE3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 7.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
75nC @ 8V
Power - Max
19W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6
Forward Transconductance Gfs (max / Min)
35 S
Gate Charge Qg
50 nC
Mounting Style
SMD/SMT
Configuration
Single
Resistance Drain-source Rds (on)
0.015 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 12 A
Power Dissipation
19 W
Continuous Drain Current Id
-12A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-500mV
Power Dissipation Pd
3.5W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIA433EDJ-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SIA433EDJ-T1-GE3
Manufacturer:
LITTLEFUSE
Quantity:
40 000
Part Number:
SIA433EDJ-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SiA433EDJ
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
GS(th)
DS
Temperature Coefficient
Temperature Coefficient
b
a
a
J
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
t
I
I
V
GS(th)
D(on)
DS(on)
Q
V
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
I
Q
Q
DS
g
R
SM
I
t
t
t
DS
t
t
t
t
SD
gd
S
rr
a
b
fs
gs
r
r
f
f
g
g
rr
/T
/T
J
J
V
I
V
F
DS
I
V
I
D
DS
D
DS
= 9 A, dI/dt = 100 A/µs, T
≅ - 9 A, V
= - 10 V, V
≅ - 9 A, V
= - 10 V, V
= - 20 V, V
V
V
V
V
V
V
V
V
V
V
DS
V
V
DS
GS
GS
GS
DS
DS
DS
GS
DS
I
DD
DD
S
Test Conditions
≤ - 5 V, V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= V
= 0 V, V
= - 10 V, I
= - 9 A, V
= 0 V, V
= 0 V, I
= - 20 V, V
I
= - 10 V, R
= - 10 V, R
D
GEN
T
GEN
f = 1 MHz
GS
= - 250 µA
GS
C
GS
GS
= 25 °C
, I
= - 4.5 V, I
= - 4.5 V, R
= - 10 V, R
D
D
GS
= - 8 V, I
GS
= 0 V, T
GS
= - 250 µA
GS
= - 250 µA
D
D
D
D
= ± 4.5 V
GS
= ± 12 V
= - 7.6 A
= - 4.5 V
= - 7.6 A
= - 6.3 A
= - 2.5 A
L
L
= 0 V
= 1 Ω
= 1 Ω
= 0 V
J
D
D
J
= 55 °C
g
= - 11 A
g
= 25 °C
= - 11 A
= 1 Ω
= 1 Ω
Min.
- 0.5
- 20
- 20
0.2
0.015
0.021
0.040
- 0.85
Typ.
0.71
- 12
3.3
8.4
1.7
3.2
0.3
0.6
3.5
35
50
20
10
30
20
13
17
S09-2114-Rev. A, 12-Oct-09
3
1
6
Document Number: 65472
0.018
0.026
0.065
Max.
± 0.5
- 1.2
± 20
0.45
- 1.2
- 10
- 12
- 50
1.1
2.6
0.9
5.5
- 1
75
30
15
60
40
2
9
5
mV/°C
Unit
µA
nC
kΩ
nC
us
ns
ns
Ω
V
V
A
S
A
V