SIA433EDJ-T1-GE3 Vishay, SIA433EDJ-T1-GE3 Datasheet - Page 5
![MOSFET P-CH D-S 20V SC-70-6](/photos/29/5/290531/ppak-sc70_sml.jpg)
SIA433EDJ-T1-GE3
Manufacturer Part Number
SIA433EDJ-T1-GE3
Description
MOSFET P-CH D-S 20V SC-70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SIA433EDJ-T1-GE3.pdf
(7 pages)
Specifications of SIA433EDJ-T1-GE3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 7.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
75nC @ 8V
Power - Max
19W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6
Forward Transconductance Gfs (max / Min)
35 S
Gate Charge Qg
50 nC
Mounting Style
SMD/SMT
Configuration
Single
Resistance Drain-source Rds (on)
0.015 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 12 A
Power Dissipation
19 W
Continuous Drain Current Id
-12A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-500mV
Power Dissipation Pd
3.5W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIA433EDJ-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SIA433EDJ-T1-GE3
Manufacturer:
LITTLEFUSE
Quantity:
40 000
Part Number:
SIA433EDJ-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65472
S09-2114-Rev. A, 12-Oct-09
30
25
20
15
10
5
0
0
Package Limited
25
T
D
C
Current Derating*
is based on T
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
20
15
10
5
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiA433EDJ
www.vishay.com
125
150
5