SIA433EDJ-T1-GE3 Vishay, SIA433EDJ-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIA433EDJ-T1-GE3
• Description: MOSFET P-CH D-S 20V SC-70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIA433EDJ-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 7.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 8V
• Power - Max: 19W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Forward Transconductance Gfs (max / Min): 35 S
• Gate Charge Qg: 50 nC
• Mounting Style: SMD/SMT
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 19 W
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -500mV
• Power Dissipation Pd: 3.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA433EDJ-T1-GE3TR

SiA433EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.1
0.1
1
1
www.vishay.com/ppg?65472.
10
10
-4
-4
0.05
0.02
0.2
0.2
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
0.02
Single Pulse
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-3
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
S09-2114-Rev. A, 12-Oct-09
t
2
Document Number: 65472
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 80 C/W
1000
10
-1