2N7002BK,215 NXP Semiconductors, 2N7002BK,215 Datasheet - Page 11

• Manufacturer Part Number: 2N7002BK,215
• Description: MOSFET N-CH 60V 350MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of 2N7002BK,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 370mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V
• Vgs(th) (max) @ Id: 2.1V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 350mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 Ohms
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 300 mA
• Power Dissipation: 0.83 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information . . . . . . . . . . . . . . . . . . . . 10
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Published in The Netherlands
N-channel TrenchMOS FET
Document number: 2N7002_6
Date of release: 28 April 2006
2N7002