2N7002BKW,115 NXP Semiconductors, 2N7002BKW,115 Datasheet - Page 3
![MOSFET N-CH 60V 310MA SOT323](/photos/16/4/160412/sot23_sml.jpg)
2N7002BKW,115
Manufacturer Part Number
2N7002BKW,115
Description
MOSFET N-CH 60V 310MA SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.2N7002215.pdf
(11 pages)
Specifications of 2N7002BKW,115
Package / Case
SC-70-3, SOT-323-3
Mounting Type
Surface Mount
Power - Max
275mW
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
0.6nC @ 4.5V
Vgs(th) (max) @ Id
2.1V @ 250µA
Current - Continuous Drain (id) @ 25° C
310mA
Drain To Source Voltage (vdss)
60V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 Ohm @ 500mA, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.8 Ohms
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
300 mA
Power Dissipation
0.83 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Philips Semiconductors
2N7002_6
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
P
10
10
(%)
D
120
der
10
80
40
-1
-2
0
1
function of solder point temperature
T
P
0
1
sp
der
= 25 C; I
=
------------------------
P
tot 25 C
50
P
DM
tot
is single pulse
100 %
100
Limit R
150
DSon
T
03aa17
= V
sp
( C)
DS
/ I
200
D
Rev. 06 — 28 April 2006
10
DC
Fig 2. Normalized continuous drain current as a
(%)
I
der
120
80
40
0
function of solder point temperature
I
0
der
=
-------------------- -
I
D 25 C
I
50
D
V
100 %
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
DS
100
N-channel TrenchMOS FET
(V)
150
t
100 µs
10 ms
100 ms
1 ms
p
=
T
003aab350
03aa25
10 µs
sp
2N7002
( C)
10
200
2
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