STD7N52DK3 STMicroelectronics, STD7N52DK3 Datasheet - Page 7

• Manufacturer Part Number: STD7N52DK3
• Description: MOSFET N-CH 620V 6.2A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperFREDmesh3™r

Specifications of STD7N52DK3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.15 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 870pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.15 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10707-2

STD7N52DK3, STF7N52DK3, STP7N52DK3
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
1000
V
100
(V)
(pF)
(A)
12
10
14
12
10
10
I
GS
C
D
2
8
6
4
0
8
6
4
2
0
1
0
0
0.1
V
Output characteristics
DS
5
10
1
V
GS
10
=10V
V
DD
I
D
=420V
=6A
20
10
15
30
100
20
AM07190v1
7V
6V
5V
V
GS
25
Q
V
Doc ID 16387 Rev 2
DS
g
(nC)
AM07192v1
AM07188v1
(V)
V
450
400
100
150
50
0
350
300
250
200
Ciss
Crss
DS
Coss
(V)
Figure 9.
Figure 13. Output capacitance stored energy
R
DS(on)
E
oss
I
0.98
0.88
1.06
1.04
1.02
1.00
0.96
0.92
0.90
D
0.94
(A)
12
(µJ)
14
10
1.5
0.5
(Ω)
4.0
3.0
2.5
2.0
1.0
3.5
8
4
6
2
0
0
0
0
0
Transfer characteristics
1
1
100
2
V
GS
2
3
200
=10V
V
DS
4
Electrical characteristics
=20V
3
300
5
4
6
400
7
5
8
500
6
9
AM07191v1
AM07193v1
AM07189v1
V
I
V
D
GS
DS
(A)
(V)
(V)
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