STP14NK50ZFP STMicroelectronics, STP14NK50ZFP Datasheet - Page 4

• Manufacturer Part Number: STP14NK50ZFP
• Description: MOSFET N-CH 500V 14A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP14NK50ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 340mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.38 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 35 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical ratings STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 - STW14NK50Z
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Table 3.
Table 4.
Protection features og gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
BV
Symbol
GSO
E
I
AR
AS
Gate-source breakdown voltage
Avalanche characteristics
Gate-source zener diode
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Parameter
Parameter
Igs=±1mA
(Open Drain)
Test conditions
Min.
30
Value
400
Typ.
12
Max.
Unit
Unit
mJ
A
V