STP4N62K3 STMicroelectronics, STP4N62K3 Datasheet - Page 11
STP4N62K3
Manufacturer Part Number
STP4N62K3
Description
MOSFET N-CH 620V 3.8A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Specifications of STP4N62K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.95 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 50V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.95 Ohms
Drain-source Breakdown Voltage
620 V
Gate-source Breakdown Voltage
3 V
Continuous Drain Current
3.8 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
14 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10651-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP4N62K3
Manufacturer:
STMicroelectronics
Quantity:
800
STB/F/I/P4N62K3
Dim
A1
b1
c2
e1
L1
L2
A
D
E
b
c
e
L
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
Min
10
13
Doc ID 17548 Rev 1
I²PAK (TO-262) mechanical data
mm
Typ
10.40
Max
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Min
Package mechanical data
inch
Typ
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.551
0.154
0.055
0.410
Max
11/14