STP28NM50N STMicroelectronics, STP28NM50N Datasheet - Page 7

• Manufacturer Part Number: STP28NM50N
• Description: MOSFET N-CH 500V 21A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP28NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 158 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1735pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.158 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 V
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 21 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 50 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10712-5

STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
2.1
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Safe operating area for TO-220,
D²PAK
Safe operating area for TO-220FP
Safe operating area for TO-247
Doc ID 17432 Rev 1
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220,
D²PAK
Thermal impedance for TO-220FP
Thermal impedance for TO-247
Electrical characteristics
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