STW13N95K3 STMicroelectronics, STW13N95K3 Datasheet - Page 4

• Manufacturer Part Number: STW13N95K3
• Description: MOSFET N-CH 950V 10A 190W TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STW13N95K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 950V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1620pF @ 100V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.68 Ohms
• Drain-source Breakdown Voltage: 950 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 51 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10772-5

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 4.
Table 5.
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
2. energy related is defined as a constant equivalent capacitance giving the same stored energy as C
V
Symbol
Symbol
C
R
C
CASE
V
(BR)DSS
C
o(er)
I
I
V
when V
DS(on)
C
C
o(tr)
GS(th)
Q
Q
R
DSS
GSS
Q
DS
oss
rss
iss
gs
gd
G
g
(1)
(2)
increases from 0 to 80% V
= 25 °C unless otherwise specified)
DS
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent capacitance time
related
Equivalent capacitance
energy related
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
increases from 0 to 80% V
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
Doc ID 15685 Rev 2
DSS
f = 1MHz open drain
V
V
V
V
(see
I
V
V
V
V
V
D
GS
GS
DS
DD
DS
DS
GS
DS
GS
= 1 mA, V
=100 V, f=1 MHz, V
= 760 V, I
=10 V
= 0, V
= max rating,
= max rating,Tc=125 °C
= ± 20 V
= V
= 10 V, I
Figure
Test conditions
Test conditions
GS
STF13N95K3, STP13N95K3, STW13N95K3
DS
, I
20)
D
GS
D
= 0 to 760 V
D
= 5 A
= 100 µA
= 0
= 10 A
GS
=0
Min.
Min.
950
3
-
-
-
-
-
1620
Typ.
Typ.
0.68
117
115
131
1.2
2.3
51
10
30
4
Max.
Max.
0.85
±10
50
oss
1
5
-
-
-
-
-
oss
when
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
pF
µA
µA
µA
Ω
Ω
V
V