STD5N62K3 STMicroelectronics, STD5N62K3 Datasheet - Page 5
![MOSFET N-CH 620V 4.2A DPAK](/photos/29/5/290509/dpak_sml.jpg)
STD5N62K3
Manufacturer Part Number
STD5N62K3
Description
MOSFET N-CH 620V 4.2A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet
1.STP5N62K3.pdf
(19 pages)
Specifications of STD5N62K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.6 Ohm @ 2.1A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
680pF @ 50V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.6 Ohms
Drain-source Breakdown Voltage
620 V
Gate-source Breakdown Voltage
30 V
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
26 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10778-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD5N62K3
Manufacturer:
STMicroelectronics
Quantity:
2 800
STB/D/F/P/U5N62K3
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
Symbol
I
BV
V
SDM
t
t
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
SD
t
t
t
t
GSO
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Gate-source breakdown
voltage
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 17361 Rev 2
Igs=± 1 mA (open drain)
V
R
(see Figure 19)
I
I
V
(see Figure 21)
I
V
(see Figure 21)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 4.2 A, V
= 4.2 A, di/dt = 100 A/µs
= 4.2 A, di/dt = 100 A/µs
= 310 V, I
= 60 V
= 60 V T
Test conditions
Test conditions
Test conditions
J
GS
D
GS
= 150 °C
= 4.2 A,
= 10 V
= 0
Electrical characteristics
Min.
Min.
Min. Typ. Max Unit
30
-
-
-
-
-
Typ.
1900
2200
Typ.
12
40
21
290
320
8
13
14
-
16.8
Max. Unit
Max Unit
4.2
1.5
-
-
nC
nC
ns
ns
ns
ns
ns
ns
5/19
A
A
V
A
A
V