BGA2003,115 NXP Semiconductors, BGA2003,115 Datasheet - Page 2

• Manufacturer Part Number: BGA2003,115
• Description: MMIC AMPLIFIER SOT-343R
• Manufacturer: NXP Semiconductors
• Type: Silicon MMIC Amplifierr

Specifications of BGA2003,115

• Noise Figure: 1.8dB ~ 2dB
• Package / Case: SOT-343R
• Current - Supply: 30mA
• Frequency: 1.8GHz
• Gain: 16dB
• Rf Type: Cellular, DECT, PHS, SATV
• Test Frequency: 900MHz
• Voltage - Supply: 4.5V
• Mounting Style: SMD/SMT
• Operating Frequency: 900 MHz to 1800 MHz
• Operating Supply Voltage: 4.5 V
• Supply Current: 11 mA
• Maximum Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Manufacturer's Type: MMIC Amplifier
• Number Of Channels: 1
• Operating Supply Voltage (max): 4.5V
• Package Type: CMPAK
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Noise Figure (typ): 1.8@1800MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• P1db: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2063-2; 934055587115; BGA2003 T/R

NXP Semiconductors
FEATURES
• Low current
• Very high power gain
• Low noise figure
• Integrated temperature compensated biasing
• Control pin for adjustment bias current
• Supply and RF output pin combined.
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
• Low noise amplifiers
• Satellite television tuners (SATV)
• High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
QUICK REFERENCE DATA
2010 Sep 13
V
I
MSG
NF
S
SYMBOL
telephones, cordless telephones (PHS, DECT, etc.)
S
Silicon MMIC amplifier
DC supply voltage
DC supply current
maximum stable gain
noise figure
PARAMETER
RF input AC coupled
V
RF input AC coupled
V
T
V
amb
VS-OUT
VS-OUT
VS-OUT
= 25 °C
= 2.5 V; I
= 2.5 V; f = 1800 MHz;
= 2.5 V; f = 1800 MHz; Γ
CONDITIONS
2
CTRL
PINNING
handbook, halfpage
= 1 mA;
Marking code: A3*
Fig.1 Simplified outline (SOT343R) and symbol.
PIN
1
2
3
4
2
3
Top view
S
GND
RF in
CTRL (bias current control)
V
= Γ
S
+ RF out
opt
4
1
−
11
16
1.8
MAM427
TYP.
DESCRIPTION
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
CIRCUIT
CTRL
BIAS
Product specification
RFin
4.5
−
−
−
MAX.
BGA2003
V
S +RFout
GND
V
mA
dB
dB
UNIT