BGA2011,115 NXP Semiconductors, BGA2011,115 Datasheet - Page 5

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BGA2011,115

Manufacturer Part Number
BGA2011,115
Description
MMIC AMPLIFIER 900MHZ SOT363
Manufacturer
NXP Semiconductors
Type
General Purpose Amplifierr
Datasheet

Specifications of BGA2011,115

Noise Figure
1.5dB
Package / Case
SC-70-6, SC-88, SOT-363
Current - Supply
10mA ~ 20mA
Frequency
900MHz
Gain
19dB
P1db
10dBm
Rf Type
CDMA, DECT, PHS
Test Frequency
900MHz
Voltage - Supply
4.5V
Mounting Style
SMD/SMT
Number Of Channels
1
Operating Frequency
900 MHz
Operating Supply Voltage
3 V
Supply Current
20 mA @ 3 V
Maximum Power Dissipation
135 mW
Maximum Operating Temperature
+ 150 C
Manufacturer's Type
Low Noise Amplifier
Frequency (max)
900MHz
Operating Supply Voltage (typ)
3V
Operating Supply Voltage (max)
4.5V
Package Type
SOT-363
Mounting
Surface Mount
Pin Count
6
Noise Figure (typ)
1.7@900MHzdB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2064-2
934056365115
BGA2011 T/R
NXP Semiconductors
2000 Dec 04
handbook, halfpage
handbook, halfpage
900 MHz high linear low noise amplifier
I
f = 900 MHz; V
C
= 15 mA; V
s 21
(dB)
gain
(dB)
Fig.5
Fig.3
30
20
10
20
15
10
0
2
5
0
10
0
−3
S
Insertion gain as a function of control
current; typical values.
Insertion gain (s
functions of frequency; typical values.
S
= V
= 4 V; P
C
= 3 V; P
s 21
G max
1000
D
2
= 30 dBm.
D
= 30 dBm; Z
10
−2
21
2
2000
) and G
o
I C (mA)
= 50 
f (MHz)
max
MLD481
MLD483
as
3000
10
−1
5
handbook, halfpage
handbook, halfpage
f = 900 MHz; V
V
Fig.4
IP3 out
S
(dBm)
Fig.6
= V
gain
(dB)
20
15
10
15
10
C
5
0
5
0
= 3 V; P
0
5
Insertion gain and supply current as
functions of control voltage; typical values.
Output and input 3rd order intercept point
as a function of supply current;
typical application; typical values.
S
D
= 3 V; P
= 30 dBm (both tones); f = 900 MHz; f = 100 kHz.
IP3 out
IP3 in
D
1
= 30 dBm.
10
s 21
I S
I S
2
2
I S (mA)
Product specification
V C (V)
BGA2011
MLD482
MLD484
15
3
0
−5
−10
−15
20
15
10
5
0
(mA)
(dBm)
IP3 in
I S

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