BGA2712,115 NXP Semiconductors, BGA2712,115 Datasheet - Page 6

• Manufacturer Part Number: BGA2712,115
• Description: MMIC AMPLIFIER SOT-363
• Manufacturer: NXP Semiconductors
• Type: MMIC Wideband Amplifierr

Specifications of BGA2712,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Supply: 12.3mA
• Frequency: 1GHz ~ 3.2GHz
• Gain: 21.3dB
• Noise Figure: 3.9dB
• P1db: 4.8dBm
• Rf Type: ISM
• Test Frequency: 1GHz
• Voltage - Supply: 5V ~ 6V
• Supply Voltage (max): 6 V
• Supply Current: 35 mA
• Operating Temperature Range: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2070-2; 934056948115; BGA2712 T/R

NXP Semiconductors
2002 Sep 10
handbook, halfpage
handbook, halfpage
MMIC wideband amplifier
I
Fig.9
f = 1 GHz; Z
(1) V
(2) V
(3) V
Fig.11 Load power as a function of drive power at
S
s 12
(dBm)
(dB)
= 12.3 mA; V
P L
−10
−20
−30
−40
−50
−10
10
−5
2
0
5
0
S
S
S
−30
= 5.5 V.
= 5 V.
= 4.5 V.
0
Isolation (s
typical values.
1 GHz; typical values.
O
= 50 
S
= 5 V; P
1000
−20
D
12
= 30 dBm; Z

2
) as a function of frequency;
2000
O
−10
= 50 
3000
P D (dBm)
f (MHz)
(1)
(2)
(3)
MLD906
MLD908
4000
0
6
handbook, halfpage
handbook, halfpage
P
(1) I
(2) I
(3) I
Fig.10 Insertion gain (s
f = 2.2 GHz; Z
(1) V
(2) V
(3) V
Fig.12 Load power as a function of drive power at
(dBm)
D
s 21
(dB)
P L
= 30 dBm; Z
−10
25
20
15
10
10
−5
S
S
S
S
S
S
2
5
0
= 15.1 mA; V
= 12.3 mA; V
= 10.1 mA; V
−30
= 5.5 V.
= 5 V.
= 4.5 V.
0
frequency; typical values.
2.2 GHz; typical values.
O
= 50 
O
1000
= 50 
S
S
S
= 5.5 V.
= 5 V.
= 4.5 V.
−20
2000
21

2
) as a function of
−10
Product specification
3000
P D (dBm)
(1)
(2)
(3)
BGA2712
f (MHz)
MLD909
MLD907
(1)
(2)
(3)
4000
0