SAA6588/V2,112 NXP Semiconductors, SAA6588/V2,112 Datasheet - Page 16
![IC RDS/RBDS PRE-PROCESSOR 20DIP](/photos/6/81/68129/568-20-dip_sot146-1_sml.jpg)
SAA6588/V2,112
Manufacturer Part Number
SAA6588/V2,112
Description
IC RDS/RBDS PRE-PROCESSOR 20DIP
Manufacturer
NXP Semiconductors
Datasheet
1.SAA6588TV2H518.pdf
(32 pages)
Specifications of SAA6588/V2,112
Function
Pre-Processor
Frequency
57kHz
Package / Case
20-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935261513112
SAA6588N
SAA6588N
SAA6588N
SAA6588N
Philips Semiconductors
CHARACTERISTICS DIGITAL PART
V
2002 Jan 14
Supply
V
I
P
Inputs
V
V
V
V
I
Outputs
V
V
V
Crystal parameters
f
C
R
DDD
i(pu)
i(xtal)
DDA
I
SYMBOL
DDD
tot
IL1
IL2
IH1
IH2
OL1
OL2
OH
L
xtal
RDS/RBDS pre-processor
LI
f
f
osc
osc(T)
= V
DDD
= 5 V; T
digital supply voltage
digital supply current
total power dissipation
LOW-level input voltage at
pins TCON, OSCI and MAD
LOW-level input voltage at
pins SCL and SDA
HIGH-level input voltage at
pins TCON, OSCI and MAD
HIGH-level input voltage at
pins SCL and SDA
input leakage current at
pins TCON, SCL and SDA
input pull-up current at pin MAD
LOW-level output voltage at
pins DAVN, PSWN and OSCO
LOW-level output voltage at
pin SDA
HIGH-level output voltage at
pins DAVN, PSWN and OSCO
crystal input frequency
adjustment tolerance of oscillator
frequency
temperature drift of oscillator
frequency
load capacitance
crystal resonance resistance
amb
PARAMETER
= 25 C; unless otherwise specified.
V
V
V
V
V
V
I
I
I
I
n = 1
n = 2
n = 3
n = 4
T
f
f
OL
OL1
OL2
OH
osc
osc
amb
DDD
DDD
DDD
MAD
MAD
MAD
= 2 mA
= 2 mA
= 17.328 MHz
= 4.0 mA
= 6.0 mA
CONDITIONS
= 40 to +85 C
= 4.5 to 5.0 V
= 5.0 to 5.5 V
= 4.5 to 5.5 V
12.996 MHz
= 0 to V
= V
= 3.5 V
16
IL1
DDD
4.5
0.7V
3.0
4.0
0.5
0.5
30
MIN.
DDD
5.0
6.0
70
4.332
8.664
12.996
17.328
30
20
20
TYP.
5.5
0.3V
+1.5
+0.3V
V
10
0.4
0.4
0.6
30
30
120
60
10
Product specification
DDD
MAX.
DDD
SAA6588
+ 0.5 V
DDD
V
mA
mW
V
V
V
V
V
V
V
V
MHz
MHz
MHz
MHz
ppm
ppm
pF
A
A
A
UNIT