VUO62-14NO7 IXYS, VUO62-14NO7 Datasheet - Page 3

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VUO62-14NO7

Manufacturer Part Number
VUO62-14NO7
Description
RECT BRIDGE 3PH 63A 1400V PWS-D
Manufacturer
IXYS
Datasheet

Specifications of VUO62-14NO7

Voltage - Peak Reverse (max)
1400V
Current - Dc Forward (if)
63A
Diode Type
Three Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Chassis Mount
Package / Case
PWS-D
Vrrm, (v)
1400
Vrsm, (v)
1500
Idavm, (a)
63
@ Th, (°c)
-
@ Tc, (°c)
110
Ifsm, 10 Ms, Tvj = 45°c, (a)
550
Vt0, (v)
0.80
Rt, (mohms)
8.0
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
1.45
Rthjh, Per Chip, (k/w)
1.87
Package Style
PWS-D
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
VUO62-14NO7
Manufacturer:
IXYS
Quantity:
1 000
Price:
© 2008 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
[A]
1.5
0.5
K/W
200
150
100
Z th
50
I
Fig. 4 Power dissipation versus direct output
2
1
F
0
Fig. 1 Forward current versus
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
T = 150˚C
vj
current and ambient temperature
0.5
voltage drop per diode
0.01
V [V]
F
1
T = 25˚C
vj
1.5
0.1
t[s]
2
1
Fig. 2 Surge overload current per
t: duration
10
diode I
Z thJK
Z thJC
FSM
: Crest value
Fig. 3
Fig.5 Maximum forward current at
per diode (or thyristor)
i
case temperature
2
dt versus time (1-10ms)
VUO 82
20080811a
3 - 3

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