STTH200L04TV1 STMicroelectronics, STTH200L04TV1 Datasheet - Page 4

DIODE ULT FAST 400V ISOTOP

STTH200L04TV1

Manufacturer Part Number
STTH200L04TV1
Description
DIODE ULT FAST 400V ISOTOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH200L04TV1

Voltage - Forward (vf) (max) @ If
1.2V @ 100A
Current - Reverse Leakage @ Vr
100µA @ 400V
Current - Average Rectified (io) (per Diode)
120A
Voltage - Dc Reverse (vr) (max)
400V
Reverse Recovery Time (trr)
100ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Parallel
Reverse Voltage
400 V
Forward Voltage Drop
1.2 V at 100 A
Recovery Time
100 ns
Forward Continuous Current
120 A
Max Surge Current
900 A
Reverse Current Ir
100 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Package Insulation Voltage
2500 VRMS
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6089-5

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
STTH200L04TV1
Manufacturer:
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Quantity:
73
Part Number:
STTH200L04TV1
Manufacturer:
STM
Quantity:
2
Part Number:
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Manufacturer:
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0
Characteristics
4/7
Figure 7.
Figure 9.
Figure 11. Junction capacitance versus
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10000
1000
100
0
0
1
T
I
j
F
=125°C
=I
50
50
F(AV)
Reverse recovery softness factor
versus dI
diode)
Transient peak forward voltage
versus dI
diode)
reverse voltage applied (typical
values, per diode)
100
100
150
150
10
200
200
dI F /dt(A/µs)
dI F /dt(A/µs)
F
F
/dt (typical values, per
/dt (typical values, per
250
250
V R (V)
300
300
100
350
350
400
400
V
OSC
F=1MHz
T
I
=30mV
F
j
=25°C
V
T
< 2 x I
j
R
=125°C
=200V
450
450
RMS
F(AV)
1000
500
500
Figure 8.
Figure 10. Forward recovery time versus dI
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1800
1600
1400
1200
1000
800
600
400
200
25
0
0
fr
I
RM
50
t
Q
RR
Relative variations of dynamic
parameters versus junction
temperature
RR
(typical values, per diode)
100
50
150
200
T j (°C)
dI F /dt(A/µs)
S
FACTOR
75
250
300
350
STTH200L04TV1
Reference: T
100
V
FR
V
=1.1 x V
400
I
T
F
R
I
=I
j
=200V
F
=125°C
=I
F(AV)
F(AV)
j
=125°C
F
450
max.
500
125
F
/dt

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