BYV255V-200 STMicroelectronics, BYV255V-200 Datasheet
BYV255V-200
Specifications of BYV255V-200
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BYV255V-200 Summary of contents
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... Tstg Storage and junction temperature range Tj Symbol V Repetitive peak reverse voltage RRM ISOTOP is a trademark of STMicroelectronics. May 2000 - Parameter Per diode = 0.5 Tc=110°C Per diode tp=10ms Per diode sinusoidal Parameter BYV255V ISOTOP (Plastic) Value Unit 150 A 100 A 1600 °C 150 ...
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... BYV255V THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Rth (c) Coupling When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol 25° 100° 125° 125°C ...
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... Single pulse 0.1 100 1000 1.0E-03 Fig.6 temperature. (duty cycle : 0.5) I F(av)(A) 120 100 Tc= Tc= Tc=110 0.1 1 P=40W P=70W =tp/T P=100W Rth(j- =tp/T tp(s) 1.0E-02 1.0E-01 : Average current versus Rth(j-a)=Rth(j-c) T =tp/T tp Tamb 100 120 BYV255V 1.0E+00 ambient 140 160 3/5 ...
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... BYV255V Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). C(pF) 800 F=1Mhz Tj=25 C 750 700 650 600 550 VR(V) 500 1 10 Fig.9 : Peak reverse current versus dIF/dt. IRM(A) 50 90%CONFIDENCE IF=IF(av Tj=100 dIF/dt(A/us 100 4/5 Fig.8 : Recovery charges versus dI QRR(uC 90%CONFIDENCE ...
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... Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. REF STMicroelectronics GROUP OF COMPANIES http://www.st.com BYV255V DIMENSIONS Millimeters Inches Min. Max. Min. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 7.8 8.20 0.307 0.323 0.75 0.85 0.030 ...