BYV255V-200 STMicroelectronics, BYV255V-200 Datasheet - Page 3

• Manufacturer Part Number: BYV255V-200
• Description: DIODE FAST REC 200V 100A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of BYV255V-200

• Voltage - Forward (vf) (max) @ If: 850mV @ 100A
• Current - Reverse Leakage @ Vr: 100µA @ 200V
• Current - Average Rectified (io) (per Diode): 100A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 80ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2694-5

Fig.1 : Average forward power dissipation versus
average forward current.
120
110
100
Fig.3 : Forward voltage drop versus forward
current (maximum values).
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
90
80
70
60
50
40
30
20
10
900
800
700
600
500
400
300
200
100
0
0.001
P F(av)(W)
0
0
1
VFM(V)
Tj=125 C
I M(A)
IM
20
o
=0.05
t
=0.5
40
10
0.01
=0.1
I F(av)(A)
60
IFM(A)
t(s)
=0.2
100
80
0.1
=tp/T
=0.5
100
Tc=110 C
Tc=25 C
Tc=75 C
T
1000
=1
tp
o
o
o
120
1
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
0.5
0.2
1.0
0.1
Fig.2 : Peak current versus form factor.
500
450
400
350
300
250
200
150
100
Fig.6
temperature. (duty cycle : 0.5)
120
100
80
60
40
20
50
1.0E-03
0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
K
0
K =
I
I M(A)
= 0 . 1
F(av)(A)
= 0 . 2
P=20W
Zth(j-c) (tp. )
Single pulse
=0.5
= 0 . 5
:
=tp/T
Rth(j-c)
20
P=40W
Average
T
40
P=70W
1.0E-02
tp
60
Rth(j-a)=Rth(j-c)
current
tp(s)
80
Tamb( C)
1.0E-01
100
o
P=100W
versus
120
=tp/T
=tp/T
BYV255V
T
140
tp
ambient
T
1.0E+00
I
tp
M
160
3/5