STTA9012TV2 STMicroelectronics, STTA9012TV2 Datasheet - Page 3

• Manufacturer Part Number: STTA9012TV2
• Description: DIODE TURBOSWITCH 1200V ISOTOP
• Manufacturer: STMicroelectronics
• Series: TURBOSWITCH™r

Specifications of STTA9012TV2

• Voltage - Forward (vf) (max) @ If: 2.05V @ 45A
• Current - Reverse Leakage @ Vr: 200µA @ 960V
• Current - Average Rectified (io) (per Diode): 45A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Reverse Recovery Time (trr): 115ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3746-5

Fig. 1: Conduction losses versus average current
(per diode).
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 5: Reverse recovery time versus dI
confidence, per diode).
100
1000
80
60
40
20
800
600
400
200
1E-3
0
0
Zth(j-c)/Rth(j-c)
0
P1(W)
0
= 0.1
= 0.2
Single pulse
= 0.5
trr(ns)
5
10
100
1E-2
15
IF=2*IF(av)
dIF/dt(A/µs)
200
20
IF(av) (A)
= 0.1
tp(s)
25
1E-1
300
30
IF=IF(av)
= 0.2
35
1E+0
= 0.5
400
40
=tp/T
VR=600V
Tj=125°C
F
IF=0.5*IF(av)
/dt (90%
T
45
= 1
5E+0
tp
500
50
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
500
100
Fig. 4: Peak reverse recovery current versus dI
(90% confidence, per diode).
80
70
60
50
40
30
20
10
Fig. 6: Softness factor (tb/ta) versus dI
values).
1.60
1.40
1.20
1.00
0.80
0.60
10
0
1
0
0.0
IRM(A)
IFM(A)
0
VR=600V
Tj=125°C
S factor
Tj=125°C
IF<2*IF(av)
VR=600V
0.5
100
100
1.0
1.5
200
200
dIF/dt(A/µs)
dIF/dt(A/µs)
VFM(V)
IF=IF(av)
2.0
300
300
2.5
STTA9012TV1/2
IF=2*IF(av)
3.0
400
400
F
IF=0.5*IF(av)
/dt (typical
Tj=125°C
3.5
F
500
500
3/8
4.0
/dt