STGE200NB60S STMicroelectronics, STGE200NB60S Datasheet - Page 6

• Manufacturer Part Number: STGE200NB60S
• Description: IGBT N-CHAN 150A 600V ISOTOP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGE200NB60S

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 100A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 1.56nF @ 25V
• Power - Max: 600W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Transistor Type: IGBT
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 600W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 4
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 200 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Collector Emitter Voltage V(br)ceo: 600V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6731-5; STGE200NB60S

Electrical characteristics
2.1
6/13
Figure 1.
Figure 3.
Figure 5.
Electrical characteristics (curves)
Output characteristics
Transconductance
Gate charge vs gate-source voltage Figure 6.
Figure 2.
Figure 4.
Transfer characteristics
Collector-emitter on voltage vs
temperature
Capacitance variations
STGE200NB60S