STGE50NC60WD STMicroelectronics, STGE50NC60WD Datasheet - Page 7
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STGE50NC60WD
Manufacturer Part Number
STGE50NC60WD
Description
IGBT UFAST N-CH 100A 600V ISOTOP
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet
1.STGE50NC60WD.pdf
(14 pages)
Specifications of STGE50NC60WD
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 40A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
4.7nF @ 25V
Power - Max
260W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
100 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
260 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Screw
Transistor Type
IGBT
Dc Collector Current
100A
Collector Emitter Voltage Vces
2.5V
Power Dissipation Pd
260W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-8781-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STGE50NC60WD
Manufacturer:
STMicroelectronics
Quantity:
135
Company:
Part Number:
STGE50NC60WD
Manufacturer:
ST
Quantity:
12 500
STGE50NC60WD
2.1
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Output characteristics
Transconductance
Gate charge vs gate-source voltage Figure 7.
Figure 3.
Figure 5.
Transfer characteristics
Collector-emitter on voltage vs
temperature
Capacitance variations
Electrical characteristics
7/14