IXEN60N120D1 IXYS, IXEN60N120D1 Datasheet
IXEN60N120D1
Manufacturer Part Number
IXEN60N120D1
Description
IGBT NPT3 1200V 100A SOT-227B
Manufacturer
IXYS
Datasheet
1.IXEN60N120D1.pdf
(4 pages)
Specifications of IXEN60N120D1
Configuration
Single
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 60A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
800µA
Input Capacitance (cies) @ Vce
3.8nF @ 25V
Power - Max
445W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
100
Ic90, Tc=90°c, Igbt, (a)
65
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Igbt, (ns)
30
Eoff, Typ, Tj=125°c, Igbt, (mj)
4.8
Rthjc, Max, Igbt, (°c/w)
0.28
If, Tc=90°c, Diode, (a)
60
Rthjc, Max, Diode, (k/w)
0.6
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NPT
in miniBLOC package
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
IGBT
C25
C90
CM
CES
GES
d(off)
SC
d(on)
r
f
GES
CEK
tot
CE(sat)
GE(th)
on
off
CES
ies
Gon
thJC
3
IGBT
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 60 A; V
= 2 mA; V
D-68623 Lampertheim
= 25°C
= 90°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= 600 V; V
= 900 V; V
= V
= 25 V; V
= ± 15 V; R
= 0 V; V
CE
GE
CES
= 600 V; I
= ± 15 V; R
; V
GE
GE
GE
GE
GE
= 15 V; T
GE
GE
= V
= ± 20 V
G
= 0 V; T
= 0 V; f = 1 MHz
= 22 Ω; T
= 15 V; I
= ± 15 V; R
C
CE
G
= 60 A
= 22 Ω
VJ
T
T
= 125°C
VJ
VJ
VJ
VJ
= 25°C
= 125°C
C
= 25°C
= 125°C
VJ
= 50 A
G
= 125°C
= 22 Ω; T
G
(T
IXEN 60N120
VJ
= 25°C, unless otherwise specified)
VJ
C
E
= 125°C
min.
4.5
Characteristic Values
Maximum Ratings
680
350
typ.
2.1
2.5
0.8
7.2
4.8
3.8
80
50
30
1200
IXEN 60N120D1
± 20
V
G
100
445
100
65
CES
10
0.28 K/W
max.
200
0.8 mA
2.7
6.5
C
E
mA
µs
mJ
mJ
nC
W
nA
nF
ns
ns
ns
ns
V
V
A
A
A
V
V
V
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
I
V
V
miniBLOC, SOT-227 B
C = Collector
G = Gate
E = Emitter *
* Either Emitter terminal can be used as Main or Kelvin Emitter
Features
• NPT
• optional HiPerFRED
• miniBLOC package
Applications
• single switches
• choppers with complementary free
• phaselegs, H bridges, three phase
C25
- low saturation voltage
- positive temperature coefficient for
- fast switching
- short tail current for optimized
- fast reverse recovery
- low operating forward voltage
- low leakage current
- isolated copper base plate
- screw terminals
- kelvin emitter terminal for easy drive
- industry standard outline
wheeling diode
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
CES
CE(sat) typ.
performance in resonant circuits
easy paralleling
3
IGBT
E153432
IXEN 60N120
IXEN 60N120D1
= 100 A
= 1200 V
= 2.1 V
TM
G
diode
C
E
1 - 4
E
Related parts for IXEN60N120D1
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXEN60N120D1 Summary of contents
Page 1
... off MHz ies 600 Gon thJC © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXEN 60N120 IXEN 60N120D1 Maximum Ratings 1200 ± 20 100 65 = 125°C 100 VJ V CES = 22 Ω 125° ...
Page 2
... ISOL ISOL M mounting torque D teminal connection torque Symbol Conditions R with heatsink compound thCH Weight © 2003 IXYS All rights reserved Maximum Ratings Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 2.3 = 125°C 1.7 = 600 200 Maximum Ratings -40 ...
Page 3
... Fig. 1 Typ. output characteristics 160 120 125° 25° Fig. 3 Typ. transfer characteristics 100 200 300 Fig. 5 Typ. turn on gate charge © 2003 IXYS All rights reserved 120 100 25° 160 A 120 100 600 400 500 IXEN 60N120 IXEN 60N120D1 ...
Page 4
... Typ. turn on energy and switching times versus gate resistor 120 A 100 Ω 125° 200 400 600 800 1000 1200 1400 Fig. 11 Reverse biased safe operating area RBSOA © 2003 IXYS All rights reserved 100 t d(on off 600 ± Ω 125° ...