CPV364M4KPBF Vishay, CPV364M4KPBF Datasheet

CPV364M4KPBF

Manufacturer Part Number

CPV364M4KPBF

Description

IGBT SIP MODULE 600V 13A IMS-2

Manufacturer

Vishay

Datasheets

1.CPV364M4KPBF.pdf (10 pages)

2.CPV364M4KPBF.pdf (10 pages)

Specifications of CPV364M4KPBF

Configuration

Three Phase Inverter

Voltage - Collector Emitter Breakdown (max)

600V

Vce(on) (max) @ Vge, Ic

1.8V @ 15V, 24A

Current - Collector (ic) (max)

24A

Current - Collector Cutoff (max)

250µA

Input Capacitance (cies) @ Vce

1.6nF @ 30V

Power - Max

63W

Input

Standard

Ntc Thermistor

Mounting Type

Through Hole

Package / Case

19-SIP (13 Leads), IMS-2

Collector- Emitter Voltage Vceo Max

600 V

Maximum Gate Emitter Voltage

+/- 20 V

Continuous Collector Current At 25 C

24 A

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Mounting Style

Through Hole

Dc Collector Current

24A

Collector Emitter Voltage Vces

600V

Power Dissipation Pd

63W

Collector Emitter Voltage V(br)ceo

600V

Operating Temperature Range

-55Â°C To +150Â°C

No. Of Pins

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Igbt Type

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

*CPV364M4K
CPV364M4K
CPV364M4K
VS-CPV364M4K
VS-CPV364M4K
VS-CPV364M4KPBF
VS-CPV364M4KPBF
VSCPV364M4K
VSCPV364M4K

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

CPV364M4KPBF

Manufacturer:

RENESAS

Quantity:

101

Current page: 1 of 10
Download datasheet (284Kb)

Thermal Resistance

Product Summary

Description

The IGBT technology is the key to International Rectifier's advanced line of

IMS (Insulated Metal Substrate) Power Modules. These modules are more

efficient than comparable bipolar transistor modules, while at the same time

having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials

system that maximizes power throughput with low thermal resistance. This

package is highly suited to motor drive applications and where space is at a

premium.

Absolute Maximum Ratings

• Short Circuit Rated UltraFast: Optimized for high

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED

• Optimized for high operating frequency (over 5kHz)

IGBT SIP MODULE

Output Current in a Typical 20 kHz Motor Drive

Rated to 10µs @ 125°C, V

See Fig. 1 for Current vs. Frequency curve

operating frequencies >5.0 kHz , and Short Circuit

STG

CES

ISOL

@ T

11 A

Power Factor 0.8, Modulation Depth 115% (See Figure 1)

(IGBT)

(DIODE)

(MODULE)

= 25°C

= 100°C

= 25°C

= 100°C

RMS

per phase (3.1 kW total) with T

soft ultrafast diodes

Collector-to-Emitter Voltage

Pulsed Collector Current

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

Isolation Voltage, any terminal to case, 1 min

Maximum Power Dissipation, each IGBT

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

Continuous Collector Current

Maximum Power Dissipation, each IGBT

Junction-to-Case, each IGBT, one IGBT in conduction

Case-to-Sink, flat, greased surface

Weight of module

Junction-to-Case, each diode, one diode in conduction

Parameter

= 15V

= 90°C, T

= 125°C, Supply Voltage 360Vdc,

Short Circuit Rated UltraFast IGBT

300 (0.063 in. (1.6mm) from case)

Q 1

Q 2

5-7 lbf•in ( 0.55-0.8 N•m)

CPV364M4K

-55 to +150

D 1

D 2

Max.

20 (0.7)

2500

600

±20

1 2

9.3

Typ.

0.10

–––

Q 3

Q 4

1 3

D 3

D 4

1 5

1 8

1 0

Max.

–––

Q 5

Q 6

–––

2.0

3.0

PD- 5.042

1 9

IMS-2

D 5

D 6

Units

g (oz)

°C/W

µs

°C

RMS

1 6

7/18/97

Related parts for CPV364M4KPBF

CPV364M4KPBF Summary of contents

Page 1

IGBT SIP MODULE • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125° 15V GE • Fully isolated printed circuit board mount package • Switching-loss rating includes ...

Page 2

CPV364M4K Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– ...

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CPV364M4KPBF Vishay, CPV364M4KPBF Datasheet

CPV364M4KPBF

Specifications of CPV364M4KPBF

Available stocks

Related parts for CPV364M4KPBF

CPV364M4KPBF Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Page 6

Page 7

Page 8

Page 9

Page 10

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