CPV364M4KPBF Vishay, CPV364M4KPBF Datasheet
CPV364M4KPBF
Specifications of CPV364M4KPBF
CPV364M4K
CPV364M4K
VS-CPV364M4K
VS-CPV364M4K
VS-CPV364M4KPBF
VS-CPV364M4KPBF
VSCPV364M4K
VSCPV364M4K
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CPV364M4KPBF Summary of contents
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... ISOL ° 100 ° Stg For 10 s, (0.063" (1.6 mm) from case) 6- screw = 10 Ω (see fig. 19) G For technical questions, contact: ind-modules@vishay.com CPV364M4KPbF Vishay High Power Products = ® soft ultrafast diodes MAX. UNITS 600 9.3 ± 20 2500 150 300 lbf ⋅ ...
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... CPV364M4KPbF Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case, each IGBT, one IGBT in conduction Junction to case, each DIODE, one DIODE in conduction Case to sink, flat, greased surface Weight of module ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Temperature coeff. of breakdown voltage ΔV ...
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... See fig 125 ° ° See fig 125 ° ° See fig 125 ° ° /dt See fig. 17 (rec 125 °C J For technical questions, contact: ind-modules@vishay.com CPV364M4KPbF Vishay High Power Products MIN. TYP. MAX. - 110 - 110 - 91 - 0.56 - 0. < 500 V CPK - 250 ...
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... CPV364M4KPbF Vishay High Power Products 0.1 100 T = 150 C ° ° 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics 100 ° 150 ° 5µs PULSE WIDTH Gate-to-Emitter Voltage (V) GE Fig Typical Output Characteristics www.vishay.com 4 IGBT SIP Module (Short Circuit Rated ...
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... Revision: 01-Sep-08 IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) SINGLE PULSE 0.001 0. Rectangular Pulse Duration (sec SHORTED ce 100 100 120 Fig Typical Switching Losses vs. Junction Temperature For technical questions, contact: ind-modules@vishay.com CPV364M4KPbF Vishay High Power Products Notes: 1. Duty factor Peak thJC C 0 ...
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... CPV364M4KPbF Vishay High Power Products 4.0 10Ω Ohm 150 C ° 480V 15V GE 3.0 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector to Emitter Current www.vishay.com 6 IGBT SIP Module (Short Circuit Rated Ultrafast IGBT 100 150° 125° 25° 0.8 1 ...
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... Fig Typical Recovery Current vs. dI Document Number: 94488 Revision: 01-Sep-08 IGBT SIP Module (Short Circuit Rated Ultrafast IGBT / /dt F For technical questions, contact: ind-modules@vishay.com CPV364M4KPbF Vishay High Power Products 800 V = 200V 125° 25°C J 600 I = 30A F 400 I = 15A 5.0A F 200 /dt - (A/µ ...
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... CPV364M4KPbF Vishay High Power Products Same type device 430 µ Fig. 18a - Test Circuit for Measurement d(on) r d(off) 90% Vge +Vge Vce 90% Ic 10% Vce Ic Ic td(off Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining off d(off) www.vishay.com 8 IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) D ...
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... Dimensions Document Number: 94488 Revision: 01-Sep-08 IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) D.U. 480 LINKS TO RELATED DOCUMENTS For technical questions, contact: ind-modules@vishay.com CPV364M4KPbF Vishay High Power Products 480 °C C Fig Pulsed Collector Current Test Circuit http://www.vishay.com/doc?95066 www.vishay.com 9 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...