CPV364M4KPBF Vishay, CPV364M4KPBF Datasheet - Page 4

IGBT SIP MODULE 600V 13A IMS-2

CPV364M4KPBF

Manufacturer Part Number
CPV364M4KPBF
Description
IGBT SIP MODULE 600V 13A IMS-2
Manufacturer
Vishay
Datasheets

Specifications of CPV364M4KPBF

Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 24A
Current - Collector (ic) (max)
24A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.6nF @ 30V
Power - Max
63W
Input
Standard
Ntc Thermistor
No
Mounting Type
Through Hole
Package / Case
19-SIP (13 Leads), IMS-2
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
24 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Dc Collector Current
24A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
63W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
13
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*CPV364M4K
CPV364M4K
CPV364M4K
VS-CPV364M4K
VS-CPV364M4K
VS-CPV364M4KPBF
VS-CPV364M4KPBF
VSCPV364M4K
VSCPV364M4K

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CPV364M4KPBF
Manufacturer:
RENESAS
Quantity:
101
CPV364M4KPbF
Vishay High Power Products
www.vishay.com
4
100
100
10
10
1
1
5
1
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Output Characteristics
T = 150 C
J
T = 150 C
18
16
14
12
10
J
8
6
4
2
0
V
V
0.1
CE
GE
6
°
, Collector-to-Emitter Voltage (V)
, Gate-to-Emitter Voltage (V)
T = 25 C
°
J
T = 25 C
J
7
°
°
V
20µs PULSE WIDTH
V
5µs PULSE WIDTH
8
GE
CC
For technical questions, contact: ind-modules@vishay.com
= 15V
= 50V
9
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
10
10
1
(Short Circuit Rated
IGBT SIP Module
Ultrafast IGBT)
f, Frequency (KHz)
RMS
of Fundamental)
10
160
140
120
100
4.0
3.0
2.0
1.0
Fig. 5 - Typical Collector to Emitter Voltage vs.
80
60
40
20
0
-60 -40 -20
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
0
Fig. 4 - Maximum Collector Current vs.
V
80 us PULSE WIDTH
GE
Square wave (D=0.50)
80% rated Vr applied
see note (2)
= 15V
5
T , Junction Temperature ( C)
J
T
Junction Temperature
C
0
Case Temperature
, Case Temperature (°C)
10
20
40 60
15
80 100 120 140 160
Document Number: 94488
100
20
I =
I =
I =
C
C
C
DC
4.68
4.10
3.51
2.93
1.76
5.27
0.00
2.34
1.17
0.59
6.5
26
13
Revision: 01-Sep-08
25
°
A
A
A
30

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