CPV364M4KPBF Vishay, CPV364M4KPBF Datasheet - Page 8

• Manufacturer Part Number: CPV364M4KPBF
• Description: IGBT SIP MODULE 600V 13A IMS-2
• Manufacturer: Vishay

Specifications of CPV364M4KPBF

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 24A
• Current - Collector (ic) (max): 24A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.6nF @ 30V
• Power - Max: 63W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 24 A
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Dc Collector Current: 24A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 63W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 13
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *CPV364M4K; CPV364M4K; CPV364M4K; VS-CPV364M4K; VS-CPV364M4K; VS-CPV364M4KPBF; VS-CPV364M4KPBF; VSCPV364M4K; VSCPV364M4K

CPV364M4KPbF
Vishay High Power Products
Fig. 18a - Test Circuit for Measurement of I
www.vishay.com
8
Fig. 18b - Test Waveforms for Circuit of Fig. 18a,
of V
80 %
+Vge
CE
Ic
td(off)
10% Vce
Defining E
t1
I
rr
, t
430 µF
d(on)
Vce
90% Vge
, t
Ic
off
r
, t
tf
, t
d(off)
d(off)
t2
90% Ic
Same type
, t
device as
, t
For technical questions, contact: [e-mail]
f
D.U.T.
LM
D.U.T.
Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit
f
Eoff =
, E
5% Ic
on
t0
, E
t1
Vce ic dt
t1+5µS
off(diode)
(Short Circuit Rated
IGBT SIP Module
, t
Ultrafast IGBT)
rr
t1
, Q
rr
t2
,
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Vcc
Vpk
DIODE REVERSE
RECOVERY ENERGY
td(on)
Ic
10% +Vg
10% Ic
10% Vcc
tx
t1
Irr
Defining E
Vce
Defining E
tr
t3
5% Vce
trr
rec
90% Ic
on
, t
, t
GATE VOLTAGE D.U.T.
rr
+Vg
d(on)
, Q
DIODE RECOVERY
WAVEFORMS
t4
Document Number: 94488
Erec =
rr
, t
, I
10% Irr
r
rr
t2
Qrr =
Eon =
DUT VOLTAGE
AND CURRENT
Ipk
t3
Revision: 01-Sep-08
Vd id dt
t4
tx
t1
Vce ie dt
id dt
trr
t2
Ic
Vcc