CPV364M4KPBF Vishay, CPV364M4KPBF Datasheet - Page 7

• Manufacturer Part Number: CPV364M4KPBF
• Description: IGBT SIP MODULE 600V 13A IMS-2
• Manufacturer: Vishay

Specifications of CPV364M4KPBF

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 24A
• Current - Collector (ic) (max): 24A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.6nF @ 30V
• Power - Max: 63W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 24 A
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Dc Collector Current: 24A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 63W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 13
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *CPV364M4K; CPV364M4K; CPV364M4K; VS-CPV364M4K; VS-CPV364M4K; VS-CPV364M4KPBF; VS-CPV364M4KPBF; VSCPV364M4K; VSCPV364M4K

Fig. 14 - Typical Reverse Recovery vs. di
Fig. 16 - Typical Stored Charge vs. di
800
600
400
200
100
80
60
40
20
0
100
100
I = 5.0A
F
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 ° C
R
J
J
I = 15A
F
I = 30A
di /dt - (A/µs)
F
di /d t - (A /µs )
I = 3 0A
f
F
f
V = 200V
T = 125°C
T = 25°C
I = 15A
I = 5.0A
F
R
J
J
F
f
/dt
f
/dt
1000
1000
Fig. 15 - Typical Recovery Current vs. di
1000
100
100
10
Fig. 17 - Typical di
1
100
100
I = 3 0A
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 ° C
F
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 ° C
R
J
J
R
J
J
I = 15 A
F
I = 1 5A
F
I = 5 .0 A
F
CPV364M4K
di /dt - (A / µs)
d i /dt - (A /µs)
f
f
(rec)M
I = 30A
F
I = 5 .0A
F
/dt vs. di
f
/dt
f
/dt
1000
1000