CPV364M4KPBF Vishay, CPV364M4KPBF Datasheet - Page 3

IGBT SIP MODULE 600V 13A IMS-2

CPV364M4KPBF

Manufacturer Part Number
CPV364M4KPBF
Description
IGBT SIP MODULE 600V 13A IMS-2
Manufacturer
Vishay
Datasheets

Specifications of CPV364M4KPBF

Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 24A
Current - Collector (ic) (max)
24A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.6nF @ 30V
Power - Max
63W
Input
Standard
Ntc Thermistor
No
Mounting Type
Through Hole
Package / Case
19-SIP (13 Leads), IMS-2
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
24 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Dc Collector Current
24A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
63W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
13
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*CPV364M4K
CPV364M4K
CPV364M4K
VS-CPV364M4K
VS-CPV364M4K
VS-CPV364M4KPBF
VS-CPV364M4KPBF
VSCPV364M4K
VSCPV364M4K

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CPV364M4KPBF
Manufacturer:
RENESAS
Quantity:
101
100
10
Fig. 2 - Typical Output Characteristics
18
16
14
12
10
8
6
4
2
0
1
0.1
1
T = 150 C
J
V
CE
°
, Collector-to-Emitter Voltage (V)
T = 25 C
J
°
Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
GE
= 15V
(Load Current = I
1
f, Frequency (KHz)
10
RMS
of fundamental)
100
Fig. 3 - Typical Transfer Characteristics
10
1
5
10
T = 150 C
J
V
GE
T c = 9 0° C
T j = 1 25 ° C
P ow er F ac tor = 0 .8
M o d ula tio n D ep th = 1 .15
V c c = 50 % o f R a ted V o lta g e
6
, Gate-to-Emitter Voltage (V)
°
CPV364M4K
T = 25 C
J
7
°
V
5µs PULSE WIDTH
8
CC
= 50V
100
9
4.68
4.10
3.51
2.93
1.76
5.27
0.00
2.34
1.17
0.59
10

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