IXSN55N120A IXYS, IXSN55N120A Datasheet
IXSN55N120A
Manufacturer Part Number
IXSN55N120A
Description
IGBT 1200V SCSOA SOT-227B
Manufacturer
IXYS
Datasheet
1.IXSN55N120A.pdf
(2 pages)
Specifications of IXSN55N120A
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4V @ 15V, 55A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
8nF @ 25V
Power - Max
500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
80
Ic90, Tc=90°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
4
Tfi, Typ, Igbt, (ns)
700
Eoff, Typ, Tj=125°c, Igbt, (mj)
18
Rthjc, Max, Igbt, (k/w)
0.25
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXSN55N120AU1
Manufacturer:
IXYS
Quantity:
500
© 2000 IXYS All rights reserved
High Voltage IGBT
Preliminary Data
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
Short Circuit SOA Capability
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
V
T
T
T
M
Weight
CES
GES
C25
C90
CM
SC
GE(th)
CE(sat)
JM
stg
CES
CGR
GEM
C
J
GES
ISOL
d
CES
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 mH
V
R
T
50/60 Hz
I
Mounting torque
Terminal connection torque (M4)
C
C
C
ISOL
CE
GE
CE
C
C
C
C
J
J
GE
GE
G
= 22 W, non-repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 15 V, V
= 25°C
£ 1 mA
= 6 mA, V
= 8 mA, V
= 0.8 V
= 0 V
= 0 V, V
= I
C90
, V
CES
GE
GE
VJ
CE
GE
CE
= 15 V
= ±20 V
= 125°C, R
= 0.6 V
= V
= 0 V
GE
IGBT
t = 1 min
t = 1 s
CES
GE
, T
= 1 MW
G
= 22 W
J
T
T
= 125°C
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
IXSN 55N120A
1200
Min.
Characteristic Values
4
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
Typ.
CM
4
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2
= 110
1200
1200
2500
3000
±20
±30
110
160
500
150
CES
10
55
30
Max.
±200
2.5
8
1
4
3
mA
mA
nA
V~
V~
°C
°C
°C
ms
W
V
V
V
V
A
V
V
A
A
A
A
g
V
I
V
miniBLOC, SOT-227 B
1 = Emitter
2 = Gate
Either Emitter terminal can be used as Main or
Kelvin Emitter
Features
Ÿ
Ÿ
Ÿ
Ÿ
Ÿ
Ÿ
Ÿ
Applications
Ÿ
Ÿ
Ÿ
Ÿ
Ÿ
Advantages
Ÿ
Ÿ
Ÿ
C25
International standard package
miniBLOC
Aluminium-nitride isolation
- high power dissipation
Isolation voltage 3000 V~
UL registered E 153432
Low V
- for minimum on-state conduction
Low collector-to-case capacitance
(<100 pF)
- reduces RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Space savings
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 2 screws
High power density
CES
CE(sat)
losses
CE(sat)
= 1200 V
=
=
2
3 = Collector
4 = Emitter
110 A
1
4 V
3
95594B(6/97)
4
1 - 2
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IXSN55N120A Summary of contents
Page 1
... 0.8 V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSN 55N120A 2 4 Maximum Ratings 1200 = 1 MW 1200 GE ±20 ±30 110 55 160 = 110 0.8 V CES , T = 125°C 10 CES ...
Page 2
... CE or increased R 950 0.25 K/W 0.05 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXSN55N120A miniBLOC, SOT-227 screws (4x) supplied nC Dim. Millimeter Inches Min. Max. Min 31.50 31.88 1.240 ...