IXSN80N60AU1 IXYS, IXSN80N60AU1 Datasheet - Page 4

• Manufacturer Part Number: IXSN80N60AU1
• Description: IGBT 100A 600V SOT-227B
• Manufacturer: IXYS

Specifications of IXSN80N60AU1

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 80A
• Current - Collector (ic) (max): 160A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 8.5nF @ 25V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

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0.001
1000
0.01
800
600
400
200
0.1
15
12
0.0001
0
9
6
3
0
1
Fig.7 Turn-Off Energy per Pulse and
0
0
Fig.11 Transient Thermal Impedance
Fig.9 Gate Charge Characteristic Curve
T
R
20
I
V
C
J
G
CE
= 80A
= 125°C
Fall Time on Collector Current
= 10
100
= 480A
40
W
Q
60
I
200
g
C
- nCoulombs
- Amperes
80
300
0.001
100 120 140 160
400
E
off
t
fi
500
24
18
12
6
0
Time - Seconds
0.01
IGBT
Diode
1000
1000
0.01
100
800
600
400
200
0.1
10
1
0
0
0
Fig.8 Dependence of Turn-Off Energy
Fig.10 Turn-Off Safe Operating Area
100
T
I
C
J
= 80A
= 125°C
Per Pulse and Fall Time on R
T
R
dV/dt < 6V/ns
10
J
G
= 125°C
= 22
200
W
0.1
IXSN80N60AU1
20
R
V
300
G
CE
Single Pulse
- Ohms
E
- Volts
t
off
fi
400
30
500
40
600
G
700
50
1
20
16
12
8
4
0
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