MWI15-12A7 IXYS, MWI15-12A7 Datasheet - Page 3

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MWI15-12A7

Manufacturer Part Number
MWI15-12A7
Description
MOD IGBT SIXPACK RBSOA 1200V E2
Manufacturer
IXYS
Datasheet

Specifications of MWI15-12A7

Igbt Type
NPT
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 15A
Current - Collector (ic) (max)
30A
Current - Collector Cutoff (max)
900µA
Input Capacitance (cies) @ Vce
1nF @ 25V
Power - Max
140W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E2
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
30
Ic80, Tc = 80°c, Igbt, (a)
20
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.0
Eoff, Typ, Tj = 125°c, Igbt, (mj)
1.8
Rthjc, Max, Igbt, (k/w)
0.88
If25, Tc = 25°c, Diode, (a)
25
If80, Tc = 80°c, Diode, (a)
17
Package Style
E2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MWI15-12A7
Manufacturer:
SEMIKRON
Quantity:
1 000
Part Number:
MWI15-12A7
Quantity:
60
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
Symbol
T
T
T
V
M
d
d
Weight
R
Equivalent Circuits for Simulation
Symbol
V
R
V
R
R
R
C
C
Module
VJ
VJM
stg
S
A
ISOL
thCH
I
0
0
0
0
1
2
1
2
d
V
0
R1
C1
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
mounting torque
creep distance on surface
strike distance through air
thermal resistance case to heatsink
Definitions
IGBT
Diode
R
0
R2
C2
R3
C3
R4
C4
Conditions
I
(M4)
with heatsink compound
Conditions
T1 - T6
D1 - D6
ISOL
Zth t ( )
< 1 mA; 50/60 Hz
=
i
n
=
1
τ
i
R
=
i
R
i
1 exp
C
i
τ
t
i
T
T
VJ
VJ
= 125°C
= 125°C
min.
min.
MWI 15-12A7
-40
-40
2.7
IGBT
6
6
-
-
-
-
1.327
0.02
1.37
Ratings
typ.
Ratings
typ.
180
62
30
max.
2500
max.
125
150
125
3.3
Diode
-
-
-
-
20080805a
3 - 6
Unit
Unit
K/W
mm
mm
mW
mW
Nm
V~
°C
°C
°C
V
V
g

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