MUBW20-06A7 IXYS, MUBW20-06A7 Datasheet - Page 2

• Manufacturer Part Number: MUBW20-06A7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS

Specifications of MUBW20-06A7

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 20A
• Current - Collector (ic) (max): 35A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 1.1nF @ 25V
• Power - Max: 125W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: E2-Pack
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 24
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.3
• Vces, Inv 3 - Ph., (v): 600
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 35
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 25
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.0
• Vces, Br Chopper, (v): 600
• Ic80, Tc = 80°c, Br Chopper, (a): 18
• Rthjc, Typ, Br Chopper, (k/w): 1.39
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
V
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
Symbol
I
I
Symbol
V
I
t
R
© 2001 IXYS All rights reserved
Output Inverter T1 - T6
C25
C80
CES
GES
Output Inverter D1 - D6
F25
F80
RM
SC
d(on)
r
d(off)
f
rr
GEM
tot
CE(sat)
GE(th)
on
off
F
CES
GES
ies
thJC
thJC
Gon
Conditions
T
Continuous
Transient
T
T
V
Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
Conditions
T
T
Conditions
I
I
V
(per diode)
C
C
F
F
VJ
C
C
C
C
C
GE
CE
CE
CE
CE
CE
R
= 20 A; V
= 15 A; di
= 20 A; V
= 0.5 mA; V
= 25°C
= 80°C
= 25°C
= 25°C
= 80°C
Inductive load, T
V
V
= 300 V; V
= 300V; V
= 25°C to 150°C
= V
= V
= 15 V; R
= 0 V; V
= 25 V; V
CE
GE
CES
CES
= 300 V; I
= ± 15 V; R
; V
; V
GE
GE
F
GE
GE
GE
/dt = -400 A/µs; T
GE
GE
GE
= 0 V; T
= 15 V; T
GE
=
G
= 0 V; T
= 15 V; R
= 0 V; f = 1 MHz
= 15 V; I
= 0 V
= 47
= V
C
G
20 V
= 20 A
= 47
CE
VJ
T
T
T
VJ
VJ
= 125°C
VJ
; T
VJ
VJ
VJ
= 25°C
= 125°C
C
= 25°C
= 125°C
= 25°C
= 125°C
VJ
G
= 20 A
= 47 ; T
= 125°C
VJ
(T
= 125°C
VJ
= 25 C, unless otherwise specified)
VJ
= 125°C
min.
min.
4.5
Characteristic Values
Characteristic Values
I
V
CM
CEK
Maximum Ratings
Maximum Ratings
=
1100
0.92
0.68
300
typ.
typ.
1.9
2.2
0.4
1.4
50
55
30
65
13
90
V
600
125
CES
20
30
35
25
40
10
35
24
max.
max.
200
2.3
6.5
0.6 mA
2.1
2.1 K/W
1 K/W
mA
µs
mJ
mJ
W
nA
nC
pF
ns
ns
ns
ns
ns
V
V
V
A
A
A
A
A
V
V
V
V
V
A
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
T1 - T6 / D1 - D6
IGBT (typ. at V
Free Wheeling Diode (typ. at T
T7 / D7
IGBT (typ. at V
Free Wheeling Diode (typ. at T
Thermal Response
D11 - D16
Rectifier Diode (typ.)
T1 - T6 / D1 - D6
IGBT (typ.)
Free Wheeling Diode (typ.)
T7 / D7
IGBT (typ.)
Free Wheeling Diode (typ.)
C
C
C
C
C
C
C
C
C
C
th2
th1
th2
th1
th2
th1
th1
th2
th1
th2
V
= 0.921 J/K; R
= 0.065 J/K; R
= 0.636 J/K; R
= 0.077 J/K; R
= 0.732 J/K; R
= 0.043 J/K; R
V
V
V
= 0.106 J/K; R
= 0.79 J/K; R
= 0.108 J/K; R
= 0.54 J/K; R
V
0
MUBW 20-06 A7
0
0
0
= 1.12V; R
0
= 1.09 V; R
= 0.99 V; R
= 1.07 V; R
= 0.9 V; R
GE
GE
= 15 V; T
= 15 V; T
0
th2
th2
0
th2
th1
th2
th1
th2
th1
0
0
0
= 0.11 m
th1
th1
J
= 65 m
= 12 m
= 81 m
= 23 m
= 0.239 K/W
= 0.462 K/W
= 125°C)
= 0.209 K/W
= 1.766 K/W
= 0.344 K/W
= 1.111 K/W
= 0.279 K/W
= 2.738 K/W
J
J
= 1.06 K/W
= 0.79 K/W
= 125°C)
= 125°C)
J
J
= 125°C)
= 125°C)
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