MUBW35-12A7 IXYS, MUBW35-12A7 Datasheet - Page 7

• Manufacturer Part Number: MUBW35-12A7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS

Specifications of MUBW35-12A7

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 35A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 1.1mA
• Input Capacitance (cies) @ Vce: 1.65nF @ 25V
• Power - Max: 225W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 29
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.06
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 50
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 35
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.6
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.55
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 25
• Rthjc, Typ, Br Chopper, (k/w): 0.7
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2004 IXYS All rights reserved
Output Inverter T1 - T6 / D1 - D6
E
E
I
CM
on
on
mJ
20
15
10
mJ
60
40
20
A
5
0
8
6
4
2
0
0
0
0
0
Fig. 13 Typ. turn on energy and switching
Fig. 15 Typ. turn on energy and switching
Fig. 17 Reverse biased safe operating area
E
t
E
d(on)
t
V
V
I
T
R
T
d(on)
on
C
on
t
VJ
CE
GE
r
VJ
G
t
r
= 47 Ω
200
= 600V
= ±15V
= 125°C
= 35A
= 125°C
20
times versus collector current
times versus gate resistor
RBSOA
20
400
40
600
40
800 1000 1200 1400
60
R
I
G
C
60
V
V
R
T
VJ
CE
GE
G
80
V
= 47Ω
= 600V
= ±15V
= 125°C
CE
A
Ω
100
80
200
150
100
50
0
160
120
80
40
0
ns
ns
V
t
t
E
E
Z
0.0001
off
thJC
off
0.001
0.01
K/W
mJ
0.1
mJ
0.00001 0.0001 0.001
10
6
4
2
0
5
4
3
2
1
0
1
0
0
Fig. 14 Typ. turn off energy and switching
Fig.16 Typ. turn off energy and switching
Fig. 18 Typ. transient thermal impedance
E
off
20
times versus collector current
times versus gate resistor
20
single pulse
E
40
off
0.01
MUBW 35-12 A7
60
R
40
0.1
G
I
C
t
V
V
R
T
V
V
I
T
C
CE
GE
VJ
VJ
G
CE
GE
80
= 600V
= 47Ω
= 600V
= ±15V
= ±15V
= 125°C
= 35A
A
= 125°C
1
t
t
d(off)
MUBW3512A7
f
Ω
diode
IGBT
t
s
t
d(off)
f
100
60
10
600
400
200
0
1000
800
600
400
200
0
ns
ns
7 - 8
t
t