MII100-12A3 IXYS, MII100-12A3 Datasheet - Page 4

• Manufacturer Part Number: MII100-12A3
• Description: IGBT 1200V 135A SOA/RBSOA
• Manufacturer: IXYS

Specifications of MII100-12A3

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 75A
• Current - Collector (ic) (max): 135A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 5.5nF @ 25V
• Power - Max: 560W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Y4-M5
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 135
• Ic80, Tc = 80°c, Igbt, (a): 90
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 10.5
• Rthjc, Max, Igbt, (k/w): 0.22
• If25, Tc = 25°c, Diode, (a): 150
• If80, Tc = 80°c, Diode, (a): 95
• Rthjc, Max, Diode, (k/w): 0.45
• Package Style: Y4-M5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
E
E
I
CM
on
on
200
160
120
40
mJ
30
20
10
80
40
25
mJ
20
15
10
A
0
5
0
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
= 125°C
= 75A
= 600V
200
= ±15V
8
times versus collector current
times versus gate resistor
RBSOA
400
50
16
600
24
R
T
V
J
G
CEK
= 125°C
= 15
< V
100
800 1000 1200
32
W
CES
R
I
G
C
40
V
V
V
R
T
J
CE
CE
GE
G
150
48
= 15
= 125°C
= 600V
= ±15V
E
t
t
d(on)
r
on
t
W
E
W
t
d(on)
A
r
on
V
56
160
120
80
40
0
200
160
120
80
40
0
ns
ns
t
t
0.00001
Z
E
E
0.0001
thJC
off
off
0.001
0.01
K/W
mJ
0.1
mJ
0.00001 0.0001
20
15
10
25
20
15
10
5
0
5
0
1
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
MII 100-12 A3
V
V
I
T
C
J
CE
GE
= 125°C
= 75A
= 600V
= ±15V
8
single pulse
times versus collector current
times versus gate resistor
50
16
diode
0.001
24
100
32
0.01
IGBT
MID 100-12 A3
MDI 100-12 A3
R
G
I
40
C
t
V
V
R
T
0.1
CE
GE
J
G
150
= 15
= 125°C
48
= 600V
= ±15V
t
t
d(off)
E
f
t
d(off)
E
W
A
off
100-12
s
W
t
off
f
56
1
800
600
400
200
0
ns
2000
1600
1200
800
400
0
ns
4 - 4
t
t