MWI100-06A8 IXYS, MWI100-06A8 Datasheet
MWI100-06A8
Manufacturer Part Number
MWI100-06A8
Description
MOD IGBT SIXPACK RBSOA 600V E3
Manufacturer
IXYS
Datasheet
1.MWI100-06A8.pdf
(2 pages)
Specifications of MWI100-06A8
Igbt Type
NPT
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 100A
Current - Collector (ic) (max)
130A
Current - Collector Cutoff (max)
1.2mA
Input Capacitance (cies) @ Vce
4.3nF @ 25V
Power - Max
410W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E3
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
130
Ic80, Tc = 80°c, Igbt, (a)
88
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.0
Eoff, Typ, Tj = 125°c, Igbt, (mj)
2.9
Rthjc, Max, Igbt, (k/w)
0.30
If25, Tc = 25°c, Diode, (a)
140
If80, Tc = 80°c, Diode, (a)
88
Package Style
E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MWI100-06A8
Manufacturer:
SANREX
Quantity:
1 000
Part Number:
MWI100-06A8
Quantity:
60
Preliminary data
Symbol
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
IGBTs
C25
C80
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
tot
CE(sat)
GE(th)
on
off
ies
thJC
Gon
Conditions
T
T
T
V
Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 1.5 mA; V
= 100 A; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= V
= V
= 300 V; V
= ± 15 V; R
= 0 V; V
= 25 V; V
CE
GE
CES
CES
= 300 V; I
= ± 15 V; R
; V
; V
GE
GE
GE
GE
GE
GE
GE
= ± 20 V
G
= 0 V; T
= ± 15 V; R
= 15 V; T
= 0 V; f = 1 MHz
= 2.2 Ω; T
= V
C
= 15 V; I
G
= 100 A
= 2.2 Ω
VJ
CE
T
= 125°C
VJ
T
VJ
VJ
VJ
= 25°C
C
= 125°C
G
VJ
= 25°C
= 125°C
= 125 A
= 2.2 Ω; T
= 125°C
(T
13, 21
14, 20
VJ
= 25°C, unless otherwise specified)
1
2
3
4
VJ
= 125°C
min.
4.5
5
6
7
8
Characteristic Values
I
V
CM
CEK
Maximum Ratings
=
150
340
typ.
≤ V
2.0
2.3
0.9
1.0
2.9
4.3
25
11
30
± 20
600
130
200
410
10
11
12
CES
88
10
9
max.
400
2.5
6.5
1.2 mA
0.3 K/W
mA
µs
mJ
mJ
W
nC
nA
nF
ns
ns
ns
ns
V
V
A
A
A
19
17
15
V
V
V
I
V
V
See outline drawing for pin arrangement
Features
€ €
€ €
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Advantages
€ €
€ €
€ €
Typical Applications
€ €
€ €
€ €
C25
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
space savings
reduced protection circuits
package designed for wave soldering
AC motor control
AC servo and robot drives
power supplies
CES
CE(sat) typ.
MWI 100-06 A8
= 130 A
= 600 V
= 2.0 V
20070912a
E72873
1 - 2
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MWI100-06A8 Summary of contents
Page 1
... 2.2 Ω = ± off MHz ies 300 Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 13 14, 20 Maximum Ratings 600 ± 20 130 88 = 125° 200 VJ CM ≤ CEK CES = 2.2 Ω ...
Page 2
... Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 140 88 Characteristic Values min. typ. = 25°C 1 125°C 1 ...